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| E2G0107-18-42 Semiconductor MSM5116405C Semiconductor This version: Apr. 1998 MSM5116405C Pr el im in ar y 4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116405C is a 4,194,304-word 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116405C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5116405C is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP. FEATURES * 4,194,304-word 4-bit configuration * Single 5 V power supply, 10% tolerance * Input : TTL compatible, low input capacitance * Output : TTL compatible, 3-state * Refresh : 4096 cycles/64 ms * Fast page mode with EDO, read modify write capability * CAS before RAS refresh, hidden refresh, RAS-only refresh capability * Multi-bit test mode capability * Package options: 26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5116405C-xxSJ) 26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM5116405C-xxTS-K) (TSOPII26/24-P-300-1.27-L) (Product : MSM5116405C-xxTS-L) xx indicates speed rank. PRODUCT FAMILY Family MSM5116405C-50 MSM5116405C-60 MSM5116405C-70 Access Time (Max.) tRAC tAA tCAC tOEA 50 ns 25 ns 13 ns 13 ns 60 ns 30 ns 15 ns 15 ns 70 ns 35 ns 20 ns 20 ns Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 90 ns 110 ns 130 ns 550 mW 495 mW 440 mW 5.5 mW 1/18 , Semiconductor MSM5116405C PIN CONFIGURATION (TOP VIEW) VCC 1 26 VSS VCC 1 26 VSS VSS 26 1 VCC DQ1 2 25 DQ4 23 CAS 22 OE DQ1 2 DQ2 3 WE 4 25 DQ4 DQ4 25 CAS 23 OE 22 A9 21 A8 19 2 DQ1 DQ2 3 24 DQ3 24 DQ3 23 CAS 22 OE 21 A9 19 A8 DQ3 24 3 DQ2 4 WE 5 RAS 6 A11R 8 A10R WE 4 RAS 5 RAS 5 A11R 6 A10R 8 21 A9 19 A8 A11R 6 A10R 8 A0 9 A0 9 18 A7 17 A6 16 A5 15 A4 18 A7 17 A6 16 A5 15 A4 A7 18 A6 17 A5 16 A4 15 9 A0 A1 10 A2 11 A3 12 A1 10 A2 11 A3 12 10 A1 11 A2 12 A3 VCC 13 14 VSS VCC 13 14 VSS VSS 14 13 VCC 26/24-Pin Plastic SOJ 26/24-Pin Plastic TSOP (K Type) 26/24-Pin Plastic TSOP (L Type) Pin Name A0 - A9, A10R, A11R RAS CAS DQ1 - DQ4 OE WE VCC VSS Function Address Input Row Address Strobe Column Address Strobe Data Input/Data Output Output Enable Write Enable Power Supply (5 V) Ground (0 V) Note : The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin. 2/18 Semiconductor MSM5116405C BLOCK DIAGRAM Timing Generator Timing Generator RAS CAS 10 Column Address Buffers Internal Address Counter 10 Column Decoders Write Clock Generator WE OE 4 Output Buffers 4 4 A0 - A9 Refresh Control Clock Sense Amplifiers 4 I/O Selector 4 4 DQ1 - DQ4 Input Buffers 4 10 A10R, A11R VCC 2 Row Address Buffers 12 Row Decoders Word Drivers Memory Cells On Chip VBB Generator On Chip IVCC Generator VSS 3/18 Semiconductor MSM5116405C ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VIN, VOUT VCC IOS PD* Topr Tstg Rating -0.5 to VCC + 0.5 -0.5 to 7 50 1 0 to 70 -55 to 150 Unit V V mA W C C *: Ta = 25C Recommended Operating Conditions (Ta = 0C to 70C) Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min. 4.5 0 2.4 -0.5*2 Typ. 5.0 0 -- -- Max. 5.5 0 VCC + 0.5*1 0.8 Unit V V V V Notes : *1. The input voltage is VCC + 2.0 V when the pulse width is less than 20 ns (the pulse width is with respect to the point at which VCC is applied). *2. The input voltage is VSS - 2.0 V when the pulse width is less than 20 ns (the pulse width is with respect to the point at which VSS is applied). Capacitance (VCC = 5 V 10%, Ta = 25C, f = 1 MHz) Parameter Input Capacitance (A0 - A9, A10R, A11R) Input Capacitance (RAS, CAS, WE, OE) Output Capacitance (DQ1 - DQ4) Symbol CIN1 CIN2 CI/O Typ. -- -- -- Max. 5 7 7 Unit pF pF pF 4/18 Semiconductor DC Characteristics Parameter Output High Voltage Output Low Voltage Input Leakage Current Symbol MSM5116405C (VCC = 5 V 10%, Ta = 0C to 70C) Condition MSM5116405 MSM5116405 MSM5116405 C-50 C-60 C-70 Unit Note Min. VOH IOH = -5.0 mA VOL IOL = 4.2 mA 0 V VI 6.5 V; ILI All other pins not under test = 0 V DQ disable 0 V VO VCC RAS, CAS cycling, tRC = Min. RAS, CAS = VIH RAS, CAS VCC -0.2 V RAS cycling, ICC3 CAS = VIH, tRC = Min. RAS = VIH, ICC5 CAS = VIL, DQ = enable ICC6 RAS cycling, CAS before RAS RAS = VIL, ICC7 CAS cycling, tHPC = Min. -- 90 -- 80 -- 70 mA 1, 3 -- 100 -- 90 -- 80 mA 1, 2 -- 5 -- 5 -- 5 mA 1 -- 100 -- 90 -- 80 mA 1, 2 -10 10 -10 10 -10 10 mA 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 Min. 2.4 0 Max. VCC 0.4 V V Output Leakage Current Average Power Supply Current (Operating) Power Supply Current (Standby) Average Power Supply Current (RAS-only Refresh) Power Supply Current (Standby) Average Power Supply Current (CAS before RAS Refresh) Average Power Supply Current (Fast Page Mode) ILO -10 10 -10 10 -10 10 mA ICC1 -- -- -- 100 2 1 -- -- -- 90 2 1 -- -- -- 80 2 mA 1, 2 ICC2 mA 1 1 Notes : 1. ICC Max. is specified as ICC for output open condition. 2. The address can be changed once or less while RAS = VIL. 3. The address can be changed once or less while CAS = VIH. 5/18 Semiconductor AC Characteristics (1/2) MSM5116405C (VCC = 5 V 10%, Ta = 0C to 70C) Note 1, 2, 3, 12, 13 Parameter Random Read or Write Cycle Time Read Modify Write Cycle Time Fast Page Mode Cycle Time Fast Page Mode Read Modify Write Cycle Time Access Time from RAS Access Time from CAS Access Time from Column Address Access Time from CAS Precharge Access Time from OE Output Low Impedance Time from CAS Data Output Hold After CAS Low CAS to Data Output Buffer Turn-off Delay Time RAS to Data Output Buffer Turn-off Delay Time OE to Data Output Buffer Turn-off Delay Time WE to Data Output Buffer Turn-off Delay Time Transition Time Refresh Period RAS Precharge Time RAS Pulse Width RAS Hold Time RAS Hold Time referenced to OE CAS Precharge Time (Fast Page Mode with EDO) CAS Pulse Width CAS Hold Time CAS to RAS Precharge Time RAS Hold Time from CAS Precharge OE Hold Time from CAS (DQ Disable) RAS to CAS Delay Time RAS to Column Address Delay Time Row Address Set-up Time Row Address Hold Time Column Address Set-up Time Column Address Hold Time Column Address to RAS Lead Time Symbol MSM5116405 MSM5116405 MSM5116405 C-50 C-70 C-60 Unit Note Min. Max. -- -- -- -- 50 13 25 30 13 -- -- 13 13 13 13 50 64 -- 10,000 100,000 Min. 104 135 25 68 -- -- -- -- -- 0 5 0 0 0 0 1 -- 40 60 60 10 10 10 10 40 5 35 5 14 12 0 10 0 10 30 Max. -- -- -- -- 60 15 30 35 15 -- -- 15 15 15 15 50 64 -- 10,000 100,000 Min. 124 160 30 78 -- -- -- -- -- 0 5 0 0 0 0 1 -- 50 70 70 13 13 10 13 45 5 40 5 14 12 0 13 0 13 35 Max. -- -- -- -- 70 20 35 40 20 -- -- 20 20 20 20 50 64 -- 10,000 100,000 tRC tRWC tHPC tHPRWC tRAC tCAC tAA tCPA tOEA tCLZ tDOH tCEZ tREZ tOEZ tWEZ tT tREF tRP tRAS tRSH tROH tCP tCAS tCSH tCRP tRHCP tCHO tRCD tRAD tASR tRAH tASC tCAH tRAL 84 110 20 58 -- -- -- -- -- 0 5 0 0 0 0 1 -- 30 50 50 7 7 7 7 35 5 30 5 11 9 0 7 0 7 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 5 6 7, 8 7, 8 7 7 3 4, 5, 6 4, 5 4, 6 4 4 4 RAS Pulse Width (Fast Page Mode with EDO) tRASP -- -- -- 10,000 -- -- -- -- 37 25 -- -- -- -- -- -- -- -- 10,000 -- -- -- -- 45 30 -- -- -- -- -- -- -- -- 10,000 -- -- -- -- 50 35 -- -- -- -- -- 6/18 Semiconductor AC Characteristics (2/2) MSM5116405C (VCC = 5 V 10%, Ta = 0C to 70C) Note 1, 2, 3, 12, 13 Parameter Read Command Set-up Time Read Command Hold Time Read Command Hold Time referenced to RAS Write Command Set-up Time Write Command Hold Time Write Command Pulse Width WE Pulse Width (DQ Disable) OE Command Hold Time OE Precharge Time OE Command Hold Time Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in Set-up Time Data-in Hold Time OE to Data-in Delay Time CAS to WE Delay Time Column Address to WE Delay Time RAS to WE Delay Time CAS Precharge WE Delay Time CAS Active Delay Time from RAS Precharge RAS to CAS Set-up Time (CAS before RAS) RAS to CAS Hold Time (CAS before RAS) WE to RAS Precharge Time (CAS before RAS) WE Hold Time from RAS (CAS before RAS) RAS to WE Set-up Time (Test Mode) RAS to WE Hold Time (Test Mode) Symbol MSM5116405 MSM5116405 MSM5116405 C-50 C-60 C-70 Unit Note Min. Max. Min. 0 0 0 0 10 10 10 10 10 10 10 10 0 10 15 34 49 79 54 5 5 10 10 10 10 10 Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Min. 0 0 0 0 13 10 10 13 10 10 13 13 0 13 20 44 59 94 64 5 5 10 10 10 10 10 Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 11 11 10 10 10 10 9 9 10 0 0 0 0 7 7 7 7 7 7 7 7 0 7 13 30 42 67 47 5 5 10 10 10 10 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- tRCS tRCH tRRH tWCS tWCH tWP tWPE tOEH tOEP tOCH tRWL tCWL tDS tDH tOED tCWD tAWD tRWD tCPWD tRPC tCSR tCHR tWRP tWRH tWTS tWTH 7/18 Semiconductor Notes: MSM5116405C 1. A start-up delay of 200 s is required after power-up, followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. 2. The AC characteristics assume tT = 2 ns. 3. VIH (Min.) and VIL (Max.) are reference levels for measuring input timing signals. Transition times (tT) are measured between VIH and VIL. 4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF. 5. Operation within the tRCD (Max.) limit ensures that tRAC (Max.) can be met. tRCD (Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (Max.) limit, then the access time is controlled by tCAC. 6. Operation within the tRAD (Max.) limit ensures that tRAC (Max.) can be met. tRAD (Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (Max.) limit, then the access time is controlled by tAA. 7. tCEZ (Max.), tREZ (Max.), tWEZ (Max.) and tOEZ (Max.) define the time at which the output achieves the open circuit condition and are not referenced to output voltage levels. 8. tCEZ and tREZ must be satisfied for open circuit condition. 9. tRCH or tRRH must be satisfied for a read cycle. 10. tWCS, tCWD, tRWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS tWCS (Min.), then the cycle is an early write cycle and the data out will remain open circuit (high impedance) throughout the entire cycle. If tCWD tCWD (Min.) , tRWD tRWD (Min.), tAWD tAWD (Min.) and tCPWD tCPWD (Min.), then the cycle is a read modify write cycle and data out will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, then the condition of the data out (at access time) is indeterminate. 11. These parameters are referenced to the CAS leading edge in an early write cycle, and to the WE leading edge in an OE control write cycle, or a read modify write cycle. 12. The test mode is initiated by performing a WE and CAS before RAS refresh cycle. This mode is latched and remains in effect until the exit cycle is generated. In a test mode CA0 and CA1 are not used and each DQ pin now accesses 4-bit locations. Since all 4 DQ pins are used, a total of 16 data bits can be written in parallel into the memory array. In a read cycle, if 4 data bits are equal, the DQ pin will indicate a high level. If the 4 data bits are not equal, the DQ pin will indicate a low level. The test mode is cleared and the memory device returned to its normal operating state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle. 13. In a test mode read cycle, the value of access time parameters is delayed for 5 ns for the specified value. These parameters should be specified in test mode cycle by adding the above value to the specified value in this data sheet. 8/18 E2G0100-17-41M Semiconductor MSM5116405C ,,, , ,, , ,,,, TIMING WAVEFORM Read Cycle tRC tRAS tRP RAS VIH - VIL - tCRP tCSH tCRP tRCD VIH - CAS VIL - VIH - VIL - VIH - VIL - VIH - VIL - VOH - tRAD tRSH tCAS tRAL tASR tRAH tASC tCAH Address Row Column tRCS tRRH tRCH WE tAA tROH tOEA tREZ OE tRAC tCAC tOEZ tCEZ DQ VOL - Open Valid Data-out tCLZ "H" or "L" Write Cycle (Early Write) tRC tRAS tRP RAS VIH - VIL - tCRP tCRP tCSH tRCD tRSH VIH - CAS VIL - VIH - VIL - VIH - VIL - tRAD tRAH tCAS tASR tASC tCAH tRAL Address Row Column tWCS WE tWCH tWP tCWL tRWL OE VIH - VIL - VIH - tDS tDH DQ VIL - Valid Data-in Open "H" or "L" 9/18 ,,, Semiconductor MSM5116405C Read Modify Write Cycle tRWC tRAS tRP VIH - RAS VIL - tCSH tCRP tCRP tRCD tRSH CAS VIH - VIL - tCAS tASR tRAH tASC tCAH VIH - Address VIL - VIH - VIL - VIH - VIL - VI/OH- Row Column tRAD tRWD tCWD WE OE tAA tAWD tCWL tRWL tWP tRCS tOEA tOED tOEH tCAC tRAC tOEZ tDS tDH DQ VI/OL- tCLZ Valid Data-out Valid Data-in "H" or "L" 10/18 Semiconductor Fast Page Mode Read Cycle (Part-1) Address Fast Page Mode Read Cycle (Part-2) Address , ,,, , , MSM5116405C tRASP tRP RAS VIH - VIL - tRHCP tCRP tRCD tHPC tCP tCP CAS VIH - VIL - tCAS tCAS tCAS tRAD tASR tRAH tASC tCSH tCAH tASC tCAH tASC tCAH VIH - VIL - VIH - VIL - VIH - VIL - Row Column Column Column tRCS tRRH WE tCHO tOCH tRAC tAA tOEP OE tAA tAA tOEP tOEA tCAC tCPA tDOH tCAC tOEA tOEA tOEZ tCAC tOEZ tREZ DQ VOH - VOL - tCLZ Valid Data-out Valid Data-out Valid* Data-out Valid* Data-out * : Same Data, "H" or "L" tRASP tRP RAS VIH - VIL - tRHCP tCRP tCRP tHPC tRCD tCP tCP CAS VIH - VIL - tCAS tCAS tCAS tRAD tASR tRAH tCSH tASC tCAH Column tASC tCAH tASC tCAH VIH - VIL - VIH - VIL - VIH - VIL - Row Column Column tRCS tRCS WE tRAC tAA tRCH tWPE tAA tAA OE tCPA tOEA tCAC tWEZ tCAC tCAC tDOH tCEZ DQ VOH - VOL - tCLZ Valid Data-out Valid Data-out Valid Data-out "H" or "L" 11/18 ,, , , , Semiconductor MSM5116405C Fast Page Mode Write Cycle (Early Write) VIH - VIL - tRASP tRP RAS tCRP tRCD tHPC tHPC tCP tCP CAS VIH - VIL - tCAS tCAS tCAS tRAD tASR tRAH tCSH tASC tCAH Column tASC tCAH tASC tRSH tCAH Address VIH - VIL - VIH - VIL - VIH - VIL - VIH - VIL - Row Column Column tWCS tWCH tWCS tWCH tWCS tWCH WE OE tDS tDH tDS tDH tDS tDH DQ Valid Data-in Valid Data-in Valid Data-in "H" or "L" Fast Page Mode Read Modify Write Cycle tRASP RAS VIH - VIL - tRWD tCRP tRCD tCP CAS VIH - VIL - tRAD tCWD tASR tRAH tASC tHPRWC tCPWD tASC tCAH tCWL tCPA tCAH tRWL Address VIH - VIL - Row Column Column tRCS tAWD tRCS tCWD WE VIH - VIL - tRAC tAWD tAA tDS tWP tAA tDS tWP OE VIH - VIL - tOEA tOED tOEH tDH tOEA tOED tOEH tDH tCAC tOEZ tCAC tOEZ DQ VI/OH - VI/OL - Valid Data-out Valid Data-in Valid Data-out Valid Data-in tCLZ tCLZ "H" or "L" 12/18 Semiconductor RAS-Only Refresh Cycle t RC tRAS RAS V IH - V IL - tCRP CAS V IH - V IL - tASR Address V IH - V IL - tCEZ DQ V OH - V OL - Open Row tRAH tRPC MSM5116405C tRP Note: WE, OE = "H" or "L" "H" or "L" CAS before RAS Refresh Cycle tRC t RP RAS VIH - VIL - tRPC tCP CAS VIH - VIL - tWRP WE VIH - VIL - t CEZ DQ VOH - VOL - Open Note: OE, Address = "H" or "L" "H" or "L" tWRH tWRP tCSR tCHR tRAS t RPC tRP 13/18 Hidden Refresh Read Cycle ,,, ,, ,, , Semiconductor MSM5116405C tRC tRAS tRP tRC tRAS tRP RAS VIH - VIL - VIH - VIL - VIH - VIL - VIH - VIL - tCRP tRCD tRSH tCHR CAS tASR tRAH tRAD tASC tCAH Address Row Column tRCS tRAL tRRH WE tAA tROH OE VIH - VIL - tOEA tRAC tCAC tCLZ tCEZ tOEZ tREZ DQ VOH - VOL - Open Valid Data-out "H" or "L" Hidden Refresh Write Cycle tRC tRAS tRP tRC tRAS tRP RAS VIH - VIL - VIH - VIL - tCRP tRCD tRSH tCHR CAS tASR tRAH tRAD tASC tCAH tRAL Address VIH - VIL - VIH - VIL - VIH - VIL - VIH - VIL - Row Column tWCS tRWL tWCH WE tWP OE tDS tDH DQ Valid Data-in "H" or "L" 14/18 Semiconductor Test Mode Initiate Cycle RAS CAS WE DQ , MSM5116405C tRC tRP tRAS VIH - VIL - tRPC tCP tCSR tCHR VIH - VIL - tWTS tWTH VIH - VIL - tOFF VOH - VOL - Open Note: OE, Address = "H" or "L" "H" or "L" 15/18 Semiconductor MSM5116405C PACKAGE DIMENSIONS (Unit : mm) SOJ26/24-P-300-1.27 Mirror finish Package material Lead frame material Pin treatment Solder plate thickness Package weight (g) Epoxy resin 42 alloy Solder plating 5 mm or more 0.80 TYP. Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). 16/18 Semiconductor MSM5116405C (Unit : mm) TSOPII26/24-P-300-1.27-K Mirror finish Package material Lead frame material Pin treatment Solder plate thickness Package weight (g) Epoxy resin 42 alloy Solder plating 5 mm or more 0.29 TYP. Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). 17/18 Semiconductor MSM5116405C (Unit : mm) TSOPII26/24-P-300-1.27-L Mirror finish Package material Lead frame material Pin treatment Solder plate thickness Package weight (g) Epoxy resin 42 alloy Solder plating 5 mm or more 0.29 TYP. Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). 18/18 |
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